Full Band Monte Carlo Simulation of Phonon Transport in Semiconductor Nanostructures

被引:0
|
作者
Aksamija, Z. [1 ]
机构
[1] Univ Massachusetts Amherst, Elect & Comp Engn Dept, Amherst, MA 01003 USA
关键词
THERMAL-CONDUCTIVITY; SILICON NANOWIRES; PERFORMANCE; DISPERSION; ELECTRON;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In this paper, a numerical simulation of thermal transport at the nanoscale is developed by solving the phonon Boltzmann transport equation by the Monte Carlo method. A full phonon dispersion is used to determine accurately the vibrational frequencies and group velocities of all phonon modes. Simultaneous conservation of energy and momentum in anharmonic phonon-phonon scattering events in enabled by a novel algorithm developed in this work. The inclusion of rough boundaries and the treatment of their impact on phonon transport is also discussed. The results demonstrate the convergence, accuracy, and efficiency of the proposed simulation.
引用
下载
收藏
页码:37 / 40
页数:4
相关论文
共 50 条
  • [21] Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride
    Ando, Y
    Hori, Y
    Contrata, W
    Samoto, N
    PHYSICA B, 1999, 272 (1-4): : 253 - 255
  • [22] Full-Band Monte Carlo Simulation of HgCdTe APDs
    Francesco Bertazzi
    Michele Moresco
    Michele Penna
    Michele Goano
    Enrico Bellotti
    Journal of Electronic Materials, 2010, 39 : 912 - 917
  • [23] Full band Monte Carlo simulation of AlInAsSb digital alloys
    Zheng, Jiyuan
    Ahmed, Sheikh Z.
    Yuan, Yuan
    Jones, Andrew
    Tan, Yaohua
    Rockwell, Ann K.
    March, Stephen D.
    Bank, Seth R.
    Ghosh, Avik W.
    Campbell, Joe C.
    INFOMAT, 2020, 2 (06) : 1236 - 1240
  • [24] Hierarchy of full band structure models for Monte Carlo simulation
    Ravaioli, U
    Duncan, A
    Pacelli, A
    Wordelman, C
    Hess, K
    VLSI DESIGN, 1998, 6 (1-4) : 147 - 153
  • [25] Full-Band Monte Carlo Simulation of HgCdTe APDs
    Bertazzi, Francesco
    Moresco, Michele
    Penna, Michele
    Goano, Michele
    Bellotti, Enrico
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 912 - 917
  • [26] Full-band Monte Carlo simulation for metal-semiconductor contact with direct tunneling effect
    Sun, L
    Du, G
    Liu, XY
    Han, RQ
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 920 - 923
  • [27] Vertical electron transport in semiconductor superlattices Monte Carlo simulation
    Voves, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 417 - 420
  • [28] Semiconductor transport simulation with the local iterative Monte Carlo technique
    Jakumeit, J
    Ravaioli, U
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) : 946 - 955
  • [29] Monte Carlo simulation of diffusive-to-ballistic transition in phonon transport
    Kentaro Kukita
    Indra Nur Adisusilo
    Yoshinari Kamakura
    Journal of Computational Electronics, 2014, 13 : 264 - 270
  • [30] Monte Carlo simulation of diffusive-to-ballistic transition in phonon transport
    Kukita, Kentaro
    Adisusilo, Indra Nur
    Kamakura, Yoshinari
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (01) : 264 - 270