Small-sized SAW Duplexers with Wide Duplex Gap on a SiO2/Al/LiNbO3 structure by using Novel Rayleigh-mode Spurious Suppression Technique
被引:2
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作者:
Nakanishi, H.
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机构:
Panasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, JapanPanasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
Nakanishi, H.
[1
]
Nakamura, H.
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机构:
Panasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, JapanPanasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
Nakamura, H.
[1
]
Hamaoka, Y.
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Panasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, JapanPanasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
Hamaoka, Y.
[1
]
Kamiguchi, H.
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Panasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, JapanPanasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
Kamiguchi, H.
[1
]
Iwasaki, Y.
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机构:
Panasonic Elect Devices Co Ltd, Circuit Components Business Unit, Osaka, JapanPanasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
Iwasaki, Y.
[2
]
机构:
[1] Panasonic Elect Devices Co Ltd, Corp Components Dev Ctr, Osaka, Japan
[2] Panasonic Elect Devices Co Ltd, Circuit Components Business Unit, Osaka, Japan
Duplexer;
Rayleigh-mode spurious;
the shape of SiO2;
Band I;
Band IV;
D O I:
10.1109/ULTSYM.2008.0387
中图分类号:
O42 [声学];
学科分类号:
070206 ;
082403 ;
摘要:
This paper describes the novel Rayleigh-mode spurious suppression technique for SAW duplexers with wide duplex gap On a SiO2/AVLiNbO(3) structure. We have cleared the optimum shape of SiO2 with taking account of the difference of the electrode thickness. The shape Of SiO2 which can suppress the spurious depended on the thickness of Al electrode. By controlling the shape Of SiO2, the Rayleigh-mode spurious of both Band I and Band IV duplexers can be suppressed. The small-sized SAW duplexers for Band I and Band IV systems were realized by employing this technology and optimizing the thickness of Al electrode. Our duplexers show the excellent performances for actually use. Insertion loss of transmitting band for Band I and for Band IV are 1.2dB and 1.3dB. And, the TCF is about -30ppm/degrees C. The size of these duplexers is 2.5mmx2.0mm. Additionally, the duplexers have sufficient power durability by using, the multi-layer electrodes of AlMgCu/Ti.
机构:
Panason Elect Devices Co Ltd, Osaka 5718506, Japan
Chiba Univ, Grad Sch Engn, Chiba 2638522, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan
Nakamura, Hiroyuki
Nakanishi, Hidekazu
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Panason Elect Devices Co Ltd, Osaka 5718506, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan
Nakanishi, Hidekazu
Tsurunari, Tetsuya
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Panason Elect Devices Co Ltd, Osaka 5718506, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan
Tsurunari, Tetsuya
Matsunami, Ken
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Panason Elect Devices Co Ltd, Osaka 5718506, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan
Matsunami, Ken
Iwasaki, Yukio
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机构:
Panason Elect Devices Co Ltd, Osaka 5718506, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan
Iwasaki, Yukio
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机构:
Hashimoto, Ken-ya
Yamaguchi, Masatsune
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机构:
Chiba Univ, Grad Sch Engn, Chiba 2638522, JapanPanason Elect Devices Co Ltd, Osaka 5718506, Japan