Ferroelectric transition in compressively strained SrTiO3 thin films

被引：47

作者：

Verma, Amit ^{[1
,2
]}

Raghavan, Santosh ^{[3
]}

Stemmer, Susanne ^{[3
]}

Jena, Debdeep ^{[1
,2
,4
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 19期

关键词：

DIELECTRIC RESPONSE; TEMPERATURE;

D O I：

10.1063/1.4935592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at similar to 140 K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of similar to 56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature. (C) 2015 AIP Publishing LLC.

引用

页数：5

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