Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopy

被引：3
|
作者：
Tokuda, Y [1 ]
Kamiya, K
Okumura, T
机构：
[1] Aichi Inst Technol, Dept Elect, Toyota 4700392, Japan
[2] Tokyo Metropolitan Univ, Dept Elect Engn, Hachioji, Tokyo 1920397, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期
关键词：
GaAs; metastable hydrogen-related defects; CCVTS; electric field;
D O I：
10.1016/S0022-0248(99)00692-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the characterization of metastable hydrogen-related defects (M3/M4) in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopy (CCVTS). The double-correlation CCVTS spectra measured around 140 K clearly shows that the M4 defect consists of two discrete components labeled M4(1) and M4(2), which gives definitive support to the recent report that the M4 defect consists of two different configurations. The electric field dependence of the emission rates indicates that the M3 and M4(1) have a donor-like nature, while the M4(2) is acceptor like. (C) 2000 Elsevier Science B.V. All rights reserved.
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页码：260 / 263
页数：4
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