SiGe hetero FETs on silicon at cryogenic temperature

被引：2
|
作者：
Aniel, F [1 ]
Enciso-Aguilar, M
Zerounian, N
Giguerre, L
Crozat, P
Adde, R
Zeuner, M
Höck, G
Hackbarth, T
Herzog, HJ
König, U
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Daimler Chrysler Res Ctr, D-89081 Ulm, Germany
来源：
JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期
关键词：
D O I：
10.1051/jp420020026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on RF and low noise.
引用
收藏
页码：3 / 10
页数：8
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