Ba titanate and barium/strontium titanate thin films from hydroxide precursors: Preparation and ferroelectric behavior

被引：17

作者：

Paik, DS

Rao, AVP

Komarneni, S

机构：

[1] Intercollege Mat. Res. Laboratory, Pennsylvania State University, University Park

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 1997年 / 10卷 / 02期

基金：

美国国家科学基金会;

关键词：

sol-gel processing; BaTiO3 and (Ba0.6Sr0.4)TiO3 thin films; microstructures; electrical properties;

D O I：

10.1023/A:1018312032470

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Randomly oriented ferroelectric BaTiO3 and (Ba0.6Sr0.4) TiO3 thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 mu C/cm(2) and a coercive field of 43.4 kV/cm for BaTiO3 films annealed at 800 degrees C for 1 h. Corresponding parameters for (Ba0.6Sr0.4)TiO3 films annealed at 800 degrees C were found to be 7.2 mu C/cm(2) and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 mu m in size. The leakage current for (Bi0.6Sr0.4)TiO3 films was found to be two orders of magnitude lower than that for BaTiO3 films.

引用

页码：213 / 220

页数：8

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