Microstructures and ferroelectric properties of barium strontium titanate thin films

被引:0
|
作者
Chen, HW [1 ]
Yang, CR [1 ]
Fu, CL [1 ]
Pei, WF [1 ]
Hu, LY [1 ]
机构
[1] Univ Elect Sci & Technol China, Inst Microelect & Solid State Elect, Chengdu 610054, Peoples R China
关键词
barium strontium titanate; ferroelectric thin film; domain; hysteresis loop; RF magnetron sputtering;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The microstructures and ferroelectric properties of Ba0.6Sr0.4TiO3 thin films were investigated. The composition of BST thin film with tetragonal perovskite structure was near to that of the BST ceramic target. A 90 domain was observed by piezoresponse force microscopy (PFM). It is found that the critical size from a mufti-domain to a single-domain is from 28 nm to 33 nm. The dielectric constant-voltage curves and polarization hysteresis loops of BST thin films have been measured. At 1 kHz the dielectric constant, tunability and dielectric loss of the Ba0.6Sr0.4TiO3 film with thickness 280 nm are 562, 25.6% and 0.016, respectively. The remanent polarization (Pr) and the coercive electric field (Ec) of the BST film are 1.2 mu C/cm(2) and 42.9 kV/cm at room temperature, respectively. The epsilon(r)-V and P-V curves are asymmetric, and show a voltage shift toward the negative side, which may be caused by asymmetric potential barriers at the upper and bottom interfaces.
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页码:137 / 144
页数:8
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