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Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures
被引:29
|作者:
Hung, Yu-Ming
[1
]
Hahn, Christian
[1
]
Chang, Houchen
[2
]
Wu, Mingzhong
[2
]
Ohldag, Hendrik
[3
]
Kent, Andrew D.
[1
]
机构:
[1] NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
[3] Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
来源:
关键词:
INSULATOR;
D O I:
10.1063/1.4972998
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of similar or equal to 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers. (C) 2016 Author(s).
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