Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures

被引:29
|
作者
Hung, Yu-Ming [1 ]
Hahn, Christian [1 ]
Chang, Houchen [2 ]
Wu, Mingzhong [2 ]
Ohldag, Hendrik [3 ]
Kent, Andrew D. [1 ]
机构
[1] NYU, Dept Phys, 4 Washington Pl, New York, NY 10003 USA
[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
[3] Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
来源
AIP ADVANCES | 2017年 / 7卷 / 05期
关键词
INSULATOR;
D O I
10.1063/1.4972998
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of similar or equal to 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers. (C) 2016 Author(s).
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页数:5
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