Hole transport in self-organized oligosilane thin films with highly ordered hopping sites

被引:0
|
作者
Okumoto, H [1 ]
Yatabe, T [1 ]
Richter, A [1 ]
Shimomura, M [1 ]
Kaito, A [1 ]
Minami, N [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058565, Japan
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of or-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhenius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3 x 10(-5) cm(2)/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.
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页码:409 / 414
页数:6
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