EFFECTS OF HOMO-BUFFER LAYER AND ANNEALING TREATMENT ON OPTICAL PROPERTY OF ZNO THIN FILM

被引：0

作者：

Zou, Ailing ^{[1
,2
]}

Wang, Yan ^{[1
,3
]}

Luo, Yingmin ^{[1
]}

Zhang, Heqiu ^{[1
]}

Cao, Guanying ^{[2
]}

Zou, Nianyu ^{[2
]}

Hu, Lizhong ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Dalian Polytech Univ, Sch Informat Sci & Engn, Dalian 116034, Peoples R China

[3] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

来源：

PROCEEDINGS OF 2011 INTERNATIONAL CONFERENCE ON COMMUNICATION TECHNOLOGY AND APPLICATION, ICCTA2011 | 2011年

关键词：

ZnO; Photoluminescence; annealing; buffer layer; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films with ZnO homo-buffer layer were grown on Si (111) substrates by PLD. The buffer layers, about 15 nm thick, were deposited at 300 degrees C,400 degrees C and 500 degrees C, respectively, under a base pressure of 1x10(-3) Pa. The main ZnO layers (about 400nm thick) were grown at 650 degrees C for 90 min in an oxygen ambience of 60 Pa. All the films were annealed at 500 degrees C for 20 min in an oxygen ambience of 105 Pa. PL spectra show that the PL peak intensity of the ZnO film with a homo-buffer layer gown at 300 degrees C was strongest after annealing. It means that the combination of growing homo-buffer layer at a suitable low temperature and employing appropriate post-anneal treatment is an effective method to improve the optical feature of ZnO thin film grown by PLD.

引用

页码：1009 / 1011

页数：3

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