Magnetic properties and Hall effect of CoZrGd films

被引：2
|
作者：
Shin, DH
Kim, HJ
Ranno, L
Suran, G
机构：
[1] Viatron Technol Inc, Seoul 153803, South Korea
[2] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
[3] CNRS, Lab Magnetisme Louis Neel, F-38042 Grenoble 9, France
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 07期
关键词：
D O I：
10.1002/pssb.200304594
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Hall properties of amorphous CoZrGd films (2 at% < Gd < 30 at%) were compared with their magnetic properties, since the temperature dependence of the saturation magnetization is easily controlled by changing the Co and Gd composition ratio. By considering the sub-lattice magnetizations M-Gd and M-Co, the calculated spontaneous Hall resistivity (rho(H)) increases slightly from 1.8 x 10(-12) W m/G to 3 x 10(-12) W m/G as the Gd concentration increased. It is revealed that almost all of the electron scattering originates from skew scattering. An anomalous over-fluctuation of rho(H) most marked around the compensation temperature is also reported. 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1514 / 1517
页数：4
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