Formation of NbAl3 by Nh ion implantation using metal vapor vacuum arc ion source

被引：8
|
作者：
Miao, W [1 ]
Tao, K [1 ]
Liu, BX [1 ]
Li, B [1 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 160卷 / 03期
基金：
中国国家自然科学基金;
关键词：
NbAl3; intermetallic; implantation; microhardness;
D O I：
10.1016/S0168-583X(99)00600-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
High aluminum content intermetallic compound NbAl3 was formed by Nb ion implantation into Al films with a current density of 108 mu A cm(-2) using a metal vapor vacuum are (MEVVA) ion source. When the Nb ion dose was of 3x10(17) ions cm(-2), NbAl3 phase was formed. With increasing the ion dose, the crystallinity of NbAl3 phase was gradually improved. The NbAl3 layer with a thickness of about 1900 Angstrom was obtained on the Al surface implanted by Nb ions up to a dose of 8 x 10(17) cm(-2). The microhardness of the Nb implanted Al films was significantly increased by the NbAl3 phase. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：343 / 348
页数：6
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