Formation of NbAl3 by Nh ion implantation using metal vapor vacuum arc ion source

被引：8
|
作者：
Miao, W [1 ]
Tao, K [1 ]
Liu, BX [1 ]
Li, B [1 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 160卷 / 03期
基金：
中国国家自然科学基金;
关键词：
NbAl3; intermetallic; implantation; microhardness;
D O I：
10.1016/S0168-583X(99)00600-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
High aluminum content intermetallic compound NbAl3 was formed by Nb ion implantation into Al films with a current density of 108 mu A cm(-2) using a metal vapor vacuum are (MEVVA) ion source. When the Nb ion dose was of 3x10(17) ions cm(-2), NbAl3 phase was formed. With increasing the ion dose, the crystallinity of NbAl3 phase was gradually improved. The NbAl3 layer with a thickness of about 1900 Angstrom was obtained on the Al surface implanted by Nb ions up to a dose of 8 x 10(17) cm(-2). The microhardness of the Nb implanted Al films was significantly increased by the NbAl3 phase. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：343 / 348
页数：6
相关论文
共 50 条
  • [1] Formation of Al3Ta by Ta ion implantation into aluminum using a metal vapor vacuum arc ion source
    Wei, M
    Kun, T
    Liu, XT
    Liu, BX
    MATERIALS RESEARCH BULLETIN, 2001, 36 (10) : 1759 - 1766
  • [2] Formation of Al3Hf by Hf ion implantation into aluminum using a metal vapor vacuum arc ion source
    Miao, W
    Tao, K
    Liu, XT
    Liu, BX
    SURFACE & COATINGS TECHNOLOGY, 2001, 140 (02): : 136 - 140
  • [3] CoSi2 formation by high current ion implantation with a metal vapor vacuum arc ion source
    He, Y
    Feng, JY
    Li, WZ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 211 (03): : 358 - 362
  • [4] Upgraded vacuum arc ion source for metal ion implantation
    Nikolaev, A. G.
    Oks, E. M.
    Savkin, K. P.
    Yushkov, G. Yu.
    Brown, I. G.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (02):
  • [5] FORMATION OF TI SILICIDES BY METAL-VAPOR VACUUM-ARC ION-SOURCE IMPLANTATION
    ZHU, DH
    LIU, BX
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6257 - 6262
  • [6] Formation of silver nanoparticles in silicon by metal vapor vacuum arc ion implantation
    Seo, H. W.
    Chen, Q. Y.
    Rusakova, I. A.
    Zhang, Z. H.
    Wijesundera, D.
    Yeh, S. W.
    Wang, X. M.
    Tu, L. W.
    Ho, N. J.
    Wu, Y. G.
    Zhang, H. X.
    Chu, W. K.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 292 : 50 - 54
  • [7] Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source
    Gao, KY
    Zhu, HN
    Liu, BX
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 140 (1-2): : 129 - 136
  • [8] Formation of DO23-Al3Zr by Zr ion implantation using a metal vapour vacuum arc ion source
    Miao, W
    Tao, K
    Li, B
    Liu, BX
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (18) : 2300 - 2303
  • [9] Formation of copper silicides by high dose metal vapor vacuum arc ion implantation
    Rong, C
    Zhang, JH
    Li, WZ
    APPLIED SURFACE SCIENCE, 2003, 220 (1-4) : 40 - 45
  • [10] XPS studies on SiC thin layers formed by ion implantation with a metal vapor vacuum arc ion source
    Yan, H
    Kwok, RWM
    Wong, SP
    APPLIED SURFACE SCIENCE, 1996, 92 : 61 - 65
12345