Anisotropic nanostructure ZnO photoelectrodes for CdS/CdSe quantum dot sensitized solar cells

被引：0
|
作者：
Tian, Jianjun [1 ]
机构：
[1] Univ Sci & Technol Beijing, Adv Mat & Technol Inst, Beijing 100083, Peoples R China
来源：
EIGHTH CHINA NATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND APPLICATIONS | 2014年 / 873卷
关键词：
quantum dot sensitized solar cell; ZnO; nanostructure; CdS/CdSe; CONVERSION EFFICIENCY; HIGHLY EFFICIENT; TIO2; FILMS; PERFORMANCE;
D O I：
10.4028/www.scientific.net/AMR.873.556
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CdS/CdSe quantum dots co-sensitized solar cells (QDSCs) were prepared by combining the successive ion layer absorption and reaction (SILAR) method and chemical bath deposition (CBD) method for the fabrication of CdS and CdSe quantum dots, respectively. In this work, we designed anisotropic nanostructure ZnO photoelectrodes, such as nanorods/nanosheets and nanorods array, for CdS/CdSe quantum dots co-sensitized solar cells. Our study revealed that the performance of QDSCs could be improved by modifying surface of ZnO to increase the loading of quantum dots and reduce the charge recombination.
引用
收藏
页码：556 / 561
页数：6
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