ZnO/TiO2 nanocable structured photoelectrodes for CdS/CdSe quantum dot co-sensitized solar cells

被引:125
|
作者
Tian, Jianjun [1 ,2 ]
Zhang, Qifeng [2 ]
Zhang, Lili [2 ]
Gao, Rui [2 ]
Shen, Laifa [2 ]
Zhang, Shengen [1 ]
Qu, Xuanhui [1 ]
Cao, Guozhong [2 ]
机构
[1] Univ Sci & Technol Beijing, Adv Mat & Technol Inst, Beijing 100083, Peoples R China
[2] Univ Washington, Dept Mat & Engn, Seattle, WA 98195 USA
基金
美国国家科学基金会;
关键词
HIGHLY EFFICIENT; CONVERSION EFFICIENCY; TIO2; FILMS; DYE; PERFORMANCE; ENERGY; RECOMBINATION; ELECTRODES; DEPOSITION; TRANSPORT;
D O I
10.1039/c2nr32663a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photoelectrode made of nanocable structure of ZnO nanorods (NR) coated with TiO2 nanosheets (NSs) was investigated for CdS/CdSe quantum dot co-sensitized solar cells. ZnO NRs prepared solution reaction at 60 degrees C served as the backbone for direct electron transport in view of the single crystallinity of the ZnO NRs and the high electron mobility of ZnO semiconductor. Anatase TiO2 NSs with the thickness of similar to 10 nm and the length of similar to 100 nm were assembled onto the surface of ZnO NRs via a solvothermal method. It was found that the thin shell of TiO2 might have remarkable influence on the quantum dot sensitized solar cells (QDSCs) through (a) increasing the surface area of ZnO NRs to allow for adsorbing more quantum dots (QDs), which led to high short current density, (b) forming an energy barrier that hindered the electrons in the ZnO from being back to the electrolyte and QDs, and thus, reduced the charge recombination rate, resulting in prolonged electron lifetime and enhanced open voltage. In comparison with the case of ZnO NRs, the short-circuit current density, open-circuit voltage, fill factor and charge recombination resistance of ZnO/TiO2 nanocable photoelectrode increase by 3%, 44%, 48% and 220%, respectively. As a result, a power conversion efficiency of 2.7% of QDSCs with core-shell structural nanocable photoelectrode has been obtained, which is as much as 230% of that of 1.2% obtained for ZnO NR photoelectrode.
引用
收藏
页码:936 / 943
页数:8
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