Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 degreesC) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg-H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band. (C) 2004 American Institute of Physics.