Misfit dislocations and adatom domain competitions in Cu/Ni (1(1)over-bar(1)over-bar) heteroepitaxial growth

被引：1

作者：

Zhou, Naigen ^{[1
,2
]}

Gao, Huajian ^{[2
]}

Zhou, Lang ^{[1
]}

机构：

[1] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China

[2] Brown Univ, Div Engn, 182 Hope St, Providence, RI 02912 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Line defects; Molecular dynamics; Nucleation; Surface processes; Atomic layer epitaxy; Vapor-phase epitaxy; THIN-FILM DEPOSITION; MOLECULAR-DYNAMICS; NUCLEATION; PROPAGATION; RELAXATION;

D O I：

10.1016/j.jcrysgro.2009.02.047

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three-dimensional molecular dynamics simulations of Cu/Ni (1 (1) over bar(1) over bar) heteroepitaxy were carried out based on the Sutton-Chen EAM potential. It was found that the heteroepitaxial growth leads to the nucleation and competitive growth of FCC and HCP domains in the surface adatom monolayer, leading to a network of misfit dislocations along the domain boundaries. Analyses on surface diffusion energy barriers and energy differences between FCC and HCP domains provide explanations why such domain competition mechanisms and the associated misfit dislocations are expected to play a prevalent role in heteroepitaxial growth. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2736 / 2741

页数：6

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