Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers

被引：3
|
作者：
Borionetti, G
Gambaro, D
Santi, S
Borgini, M
Godio, P
Pizzini, S
机构：
[1] MEMC Elect Mat SPA, I-28100 Novara, Italy
[2] INFM, I-20126 Milan, Italy
[3] Dept Mat Sci, I-20126 Milan, Italy
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期
关键词：
epitaxial silicon; point defects; gate oxide integrity; oxygen precipitation;
D O I：
10.1016/S0921-5107(99)00467-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the effects of thin epi layer deposition treatment on formation, growth or dissolution of traditionally known defects like oxygen precipitates or OISF and recently investigated defects, related to vacancy or self-interstitial (COPs, D-defects, I-defects) aggregates, are presented and discussed. Several characterization techniques, integrated in order to obtain a complete picture of the material properties, have been applied on substrates and epitaxial wafers. Samples have been chosen along the crystal axis to allow the study of the influence of growth thermal history on substrate defect stability at the high temperature of epi deposition treatments. The role of substrate oxygen content and dopant concentration in affecting defect formation and dissolution during epi layer growth are included in the discussion. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：218 / 223
页数：6
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