Advanced determination of piezoelectric properties of AlN thin films on silicon substrates

被引：5

作者：

Sanchez-Rojas, J. L. ^{[1
]}

Hernando, J. ^{[1
]}

Ababneh, A. ^{[2
]}

Schmid, U. ^{[2
]}

Olivares, J. ^{[3
]}

Clement, M. ^{[3
]}

Iborra, E. ^{[3
]}

机构：

[1] Univ Castilla La Mancha, ETSI Ind, Dpto Ingn Elect Elect Automat & Comunicac, E-13071 Ciudad Real, Spain

[2] Univ Saarland, Fac Nat Sci & Technol 2, Chair Micromech, Chair Microfluid Microactuators, D-66123 Saarbrucken, Germany

[3] Univ Politecn Madrid, E T S I Telecommun, Dpto Tecnol Elect, E-28040 Madrid, Spain

来源：

2008 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4 AND APPENDIX | 2008年

关键词：

Piezoelectric constants; Aluminum Nitride; vibrometer; STRESS;

D O I：

10.1109/ULTSYM.2008.0218

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Piezoelectric deformations of thin, aluminum nitride (AlN) layers, on top of a silicon substrate, were studied by numerical calculations and interferometric measurements. Our calculation by finite element method demonstrates that substrate deformation under the top electrode may be comparable to the electric field induced deformation in the thin AlN layer, for a given applied voltage. Simulations also show the effect of a clamped or free substrate condition and the relative contributions of d(33) and d(31) piezoelectric constants. A Laser scanning vibrometry technique was used to measure deformations in the top surface with sub-picometer vertical resolution. By comparing calculations and experimental data, quantitative information about both d(33) and d(31) constants can be obtained.

引用

页码：903 / +

页数：2

共 50 条

[1] Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates
Saravanan, S.
Keim, E. G.
Krijnen, G. J. M.
Elwenspoek, M.
Microscopy of Semiconducting Materials, 2005, 107 : 75 - 78
[2] Piezoelectric Properties of Sputtered AlN Thin Films and Their Applications
Schmid, U.
Sanchez-Rojas, J. L.
SMART MATERIALS & MICRO/NANOSYSTEMS, 2009, 54 : 41 - 49
[3] Highly piezoelectric AlN thin films grown on amorphous, insulating substrates
Artieda, Alvaro
Sandu, Cosmin
Muralt, Paul
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (03): : 390 - 393
[4] Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications
Zhang, Meng
Yang, Jian
Si, Chaowei
Han, Guowei
Zhao, Yongmei
Ning, Jin
MICROMACHINES, 2015, 6 (09): : 1236 - 1248
[5] Piezoelectric properties of polycrystalline AlN thin films for MEMS application
Tonisch, K.
Cimalla, V.
Foerster, Ch.
Romanus, H.
Ambacher, O.
Dontsov, D.
SENSORS AND ACTUATORS A-PHYSICAL, 2006, 132 (02) : 658 - 663
[6] Effect of silicon-based substrates and deposition type on sputtered AlN thin films: Physical & chemical properties and suitability for piezoelectric device integration
Signore, M. A.
Velardi, L.
De Pascali, C.
Kuznetsova, I.
Blasi, L.
Biscaglia, F.
Quaranta, F.
Siciliano, P.
Francioso, L.
APPLIED SURFACE SCIENCE, 2022, 599
[7] Piezoelectric properties of PZT thin films on metallic substrates
Giersbach, M
Seifert, S
Sporn, D
Hauke, T
Beige, H
FERROELECTRICS, 2000, 241 (1-4) : 175 - 182
[8] Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
Firek, P.
Waskiewicz, M.
Zdunek, K.
Szmidt, J.
Chodun, R.
Nowakowska-Langier, K.
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2019, 2019, 11176
[9] The research progress of AlN piezoelectric thin films
Xu, XH
Wu, HS
Zhang, FQ
Duan, JF
Li, ZY
RARE METAL MATERIALS AND ENGINEERING, 2002, 31 (06) : 456 - 459
[10] Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering
Hajakbari, Fatemeh
Larijani, Majid Mojtahedzadeh
Ghoranneviss, Mahmood
Aslaninejad, Morteza
Hojabri, Alireza
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (09)

← 1 2 3 4 5 →