Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

被引：2
|
作者：
Rangel-Kuoppa, Victor-Tapio [1 ,5 ]
Tonkikh, Alexander [2 ]
Zakharov, Nikolay [3 ]
Eisenschmidt, Christian [4 ]
Werner, Peter [3 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Inst Phys Microstruct RAS, GSP-105, Nizhnii Novgorod 603950, Russia
[3] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Saale, Germany
[4] Univ Halle Wittenberg, Inst Phys, Von Danckelmann Pl 3, D-01620 Halle, Saale, Germany
[5] IPN, CINVESTAV, Dept Fis Aplicada, Unidad Merida, Km 6 Carretera Merida Progreso, Merida 97310, Yucatan, Mexico
来源：
NANOTECHNOLOGY | 2016年 / 27卷 / 07期
关键词：
silicon; SiSn quantum well; DLTS; band offset; GROUP-IV SEMICONDUCTORS; N-TYPE SILICON; SCHOTTKY DIODES; CAPACITANCE; DLTS; SI; PLATFORMS; STRAIN; MODEL;
D O I：
10.1088/0957-4484/27/7/075705
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A set of Si1-xSnx/Si(001) quantum wells (QWs) is grown by applying molecular beam epitaxy. The activation energies of holes in these QWs are studied by deep-level transient spectroscopy. It is observed that the holes activation energies increase monotonically with the Sn fraction (x). The valence band offset between pseudomorphic Si1-xSnx and Si obeys the dependence Delta E-v. = 1.69x eV, while the offset between the average valence bands of unstrained Si1-xSnx/Si heterojunction was deduced and obeys the dependence Delta E-vav = 1.27x eV.
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收藏
页数：7
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