Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

被引：2

作者：

Rangel-Kuoppa, Victor-Tapio ^{[1
,5
]}

Tonkikh, Alexander ^{[2
]}

Zakharov, Nikolay ^{[3
]}

Eisenschmidt, Christian ^{[4
]}

Werner, Peter ^{[3
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[2] Inst Phys Microstruct RAS, GSP-105, Nizhnii Novgorod 603950, Russia

[3] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Saale, Germany

[4] Univ Halle Wittenberg, Inst Phys, Von Danckelmann Pl 3, D-01620 Halle, Saale, Germany

[5] IPN, CINVESTAV, Dept Fis Aplicada, Unidad Merida, Km 6 Carretera Merida Progreso, Merida 97310, Yucatan, Mexico

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 07期

关键词：

silicon; SiSn quantum well; DLTS; band offset; GROUP-IV SEMICONDUCTORS; N-TYPE SILICON; SCHOTTKY DIODES; CAPACITANCE; DLTS; SI; PLATFORMS; STRAIN; MODEL;

D O I：

10.1088/0957-4484/27/7/075705

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A set of Si1-xSnx/Si(001) quantum wells (QWs) is grown by applying molecular beam epitaxy. The activation energies of holes in these QWs are studied by deep-level transient spectroscopy. It is observed that the holes activation energies increase monotonically with the Sn fraction (x). The valence band offset between pseudomorphic Si1-xSnx and Si obeys the dependence Delta E-v. = 1.69x eV, while the offset between the average valence bands of unstrained Si1-xSnx/Si heterojunction was deduced and obeys the dependence Delta E-vav = 1.27x eV.

引用

页数：7

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