Self-assembled Ge quantum dots on Si and their applications

被引：43
|
作者：
Wang, KL [1 ]
Liu, JL [1 ]
Jin, G [1 ]
机构：
[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 III期
基金：
美国国家科学基金会;
关键词：
molecular beam epitaxy; nanomaterials; semiconducting germanium;
D O I：
10.1016/S0022-0248(01)02212-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Ge quantum dots have been grown on Si by self-assembling in the Stranski-Krastanov growth mode using molecular beam epitaxy. The topics to be addressed are size Uniformity control and exact placement of dots. Possible device application discussions show that Ge quantum dots may be Used for mid-infrared photodetectors, lasers. resonant tunneling diodes, thermoelectric cooler, cellular automata, and quantum computer. etc. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：1892 / 1897
页数：6
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