Si/Ge self-assembled quantum dots for infrared applications

被引：3

作者：

Cusack, MA ^{[1
]}

Briddon, PR ^{[1
]}

North, SM ^{[1
]}

Kitchin, MR ^{[1
]}

Jaros, M ^{[1
]}

机构：

[1] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 11期

关键词：

D O I：

10.1088/0268-1242/16/11/102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We introduce Si/Ge self-assembled quantum dots for infrared applications operating in the 3-5 mum range. Conventional Si/Ge quantum well structures are transparent to such wavelengths in the absence of heavy doping. We show that the high degree of strain lowers the bandgap and also that the electrons and holes are both localized in the interfacial region. This will consequently enhance the optical transition probabilities.

引用

页码：L81 / L84

页数：4

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