Polarization fatigue modeling of ferroelectric capacitors

被引:0
|
作者
Nishimura, K [1 ]
机构
[1] ICT Studio, Yawata 6148364, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2002年 / E85C卷 / 06期
关键词
ferroelectric; fatigue; degradation; model; NVRAM;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We developed a novel model for degradation of remanent polarization resulting from repeated polarization reversal cycling. The characteristics of ferroelectric capacitors ha v been simulated with the double saturation function model that required only five parameters: E-c, Q(rmax), Q(dmax), K-r and K-d. This novel model combines art equivalent gap capacitor with the double saturation function model. The model predicts hysteresis loops under endurance conditions. The simulated results are well in agreement with the results obtained in the experiment. The model is utilized to quantify the degradation effect of remanent polarization on ferroelectric memory applications.
引用
收藏
页码:1334 / 1341
页数:8
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