Sub-THz Phonon drag on dislocations by coarse-grained atomistic simulations

被引:31
|
作者
Xiong, Liming [1 ]
McDowell, David L. [2 ,3 ]
Chen, Youping [1 ]
机构
[1] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
Multiscale; Concurrent atomistic-continuum; Dislocation; Phonon drag; MOLECULAR-DYNAMICS SIMULATIONS; BOUNDARY INTERACTIONS; SCREW DISLOCATIONS; PLASTIC-FLOW; CONTINUUM; MOTION; DEFORMATION; MODEL; AL; MOBILITY;
D O I
10.1016/j.ijplas.2013.11.004
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
In this paper, dislocation-phonon interactions in fcc crystals are simulated using the concurrent atomistic-continuum (CAC) method. With significantly less computational cost than that by full molecular dynamics (MD) simulations, dislocation migration, phonon transport, and their interactions are explicitly modeled. Sub-THz Phonon drag coefficients on moving dislocations are predicted using CAC and compared with MD and experimental results. During the interactions between phonons and dislocations, the local temperature is found to rise due to energy dissipation, and dislocations are observed to exhibit "breathing modes" in which the separation between leading and trailing partials varies in time in a quasi-periodic fashion. Simulation results show that the phonon drag coefficient on dislocation migration increases with phonon wave packet magnitudes or sizes but is insensitive to the incident angles. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:268 / 278
页数:11
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