Autler-Townes splitting of excitons and biexcitons in semiconductors

被引：0
|
作者：
Khadzhi, P. I. [1 ]
Nadkin, L. Yu.
Tkachenko, D. V.
机构：
[1] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova
来源：
ICONO 2005: NONLINEAR OPTICAL PHENOMENA | 2006年 / 6259卷
关键词：
D O I：
10.1117/12.677871
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M-band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler-Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.
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页数：10
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