High-power high-efficiency 910-980nm broad area laser diodes

被引：22
|
作者：
Rossin, V [1 ]
Zucker, E [1 ]
Peters, M [1 ]
Everett, M [1 ]
Acklin, B [1 ]
机构：
[1] JDS Uniphase Corp, San Jose, CA 95134 USA
来源：
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS II | 2004年 / 5336卷
关键词：
laser diodes; high-power broad area semiconductor lasers; InGaAs/AlGaAs quantum well lasers;
D O I：
10.1117/12.528452
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A new generation of very efficient high power laser diodes has been developed. The design was optimized for efficient operation of a long cavity device necessary to reduce electrical and thermal resistance. CW operation of a 1000 mum wide laser at 25C yielded slope efficiency as high as 1.14W/A and 64% electrical-to-optical conversion efficiency. Optical powers as high as 13.5W for thermally limited CW operation and 17.3W for pulsed operation were also recorded.
引用
收藏
页码：196 / 202
页数：7
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