Comparison of carbon incorporation on the clean and hydrogenated Si(001) reconstructed surfaces

被引:2
|
作者
Sonnet, P [1 ]
Stauffer, L [1 ]
机构
[1] Fac Sci & Tech, Lab Phys & Spect Electron, F-68093 Mulhouse, France
关键词
density functional calculations; surface relaxation and reconstruction; silicon; carbon;
D O I
10.1016/S0039-6028(02)01180-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The size difference between carbon and silicon makes carbon incorporation in a silicon matrix difficult. We present here, in the framework of first-principle calculations, a systematic comparison of the initial stages of carbon penetration in the hydrogenated and non-hydrogenated Si(0 0 1) surfaces. The effect of the carbon position with respect to the surface predominates in the dihydrure phase, while the nature of the carbon adsorption site (alpha or beta) plays the main role in the case of the non-hydrogenated surface. In both cases, C-C interactions can modify these schemes and third neighbour positions are favoured in the fourth and fifth layers, as observed in the silicon bulk. An energetic study as a function of the carbon chemical potential in the 0 to -7.4 eV range shows no transition points at which the preferred structures could change. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:87 / 91
页数:5
相关论文
共 50 条
  • [21] Slab Thickness Effects for the Clean and Adsorbed Ge(001) Surface with Comparison to Si(001)
    Shah, G. Ali
    Radny, Marian W.
    Smith, Phillip V.
    Schofield, Steven R.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (11): : 6615 - 6622
  • [22] General trends of the carbon penetration in Si(001) surfaces
    Tammar, EM
    Sonnet, P
    Stauffer, L
    Kelires, PC
    SOLID STATE COMMUNICATIONS, 2005, 135 (1-2) : 138 - 143
  • [23] Effect of Si incorporation on corrosion resistance of hydrogenated amorphous carbon film
    Nishikawa, Jumpei
    Sugihara, Naoki
    Nakano, Masayuki
    Hieda, Junko
    Ohtake, Naoto
    Akasaka, Hiroki
    DIAMOND AND RELATED MATERIALS, 2018, 90 : 207 - 213
  • [24] Structural and electronic properties of clean and defected Si-SiC(001) surfaces
    Lawrence Livermore Natl Lab, Livermore, United States
    IEEE Semicond Semi Insul Mater Conf SIMC, (279-282):
  • [25] MECHANISMS OF THE ADSORPTION OF OXYGEN MOLECULES AND THE SUBSEQUENT OXIDATION OF THE RECONSTRUCTED DIMERS ON SI(001) SURFACES
    HOSHINO, T
    TSUDA, M
    OIKAWA, S
    OHDOMARI, I
    PHYSICAL REVIEW B, 1994, 50 (20): : 14999 - 15008
  • [26] Clean si surfaces
    Progress in Surface Science, 1995, 49 (01):
  • [27] Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy
    Rossow, U
    Mantese, L
    Yasuda, T
    Aspnes, DE
    APPLIED SURFACE SCIENCE, 1996, 104 : 137 - 140
  • [28] Hydrogenated and oxidized vicinal Si (001) surfaces investigated by reflectance-difference spectroscopy
    North Carolina State Univ, Raleigh, United States
    Appl Surf Sci, (137-140):
  • [29] Water Adsorption on the Reconstructed (001) Chalcopyrite Surfaces
    de Lima, Guilherme Ferreira
    de Oliveira, Claudio
    de Abreu, Heitor Avelino
    Duarte, Helio Anderson
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (21): : 10709 - 10717
  • [30] RHEED study of reconstructed GaAs(001) surfaces
    Dabrowska-Szata, M
    APPLIED CRYSTALLIGRAPHY, 2004, : 316 - 319