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Mechanisms of green emission from ZnO films prepared by rf magnetron sputtering

被引：71
|
作者：
Wang, QP [1 ]
Zhang, DH [1 ]
Xue, ZY [1 ]
Zhang, XJ [1 ]
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Shandong, Peoples R China
来源：
OPTICAL MATERIALS | 2004年 / 26卷 / 01期
基金：
中国国家自然科学基金;
关键词：
zinc oxide; sputtering; photon emission;
D O I：
10.1016/j.optmat.2003.12.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly orientated polycrystalline ZnO films with hexagonal structure have been deposited on Si substrate by rf magnetron sputtering. Strong monochromatic green emission located at 490 nm has been observed when excited with 300 nm light at room temperature (RT). The photoluminescence (PL) intensity decreases with increasing oxygen pressure during film deposition and it increases by thermal annealing in vacuum. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：23 / 26
页数：4
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