A new active pixel structure with a pinned photodiode for wide dynamic range image sensors

被引：4
|
作者：
Park, Jong-Ho [1 ]
Kawahito, Shoji
Wakamori, Yasuo
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Oya, Shizuoka 422, Japan
[2] Shizuoka Univ, Grad Sch Res Inst Elect, Oya, Shizuoka 422, Japan
[3] Yamaha Corp, LSI Dev Dept Semicond Div, Shizuoka, Japan
来源：
IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 18期
关键词：
CMOS image sensor; wide dynamic range; floating gate;
D O I：
10.1587/elex.2.482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode.
引用
收藏
页码：482 / 487
页数：6
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