Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

被引:95
|
作者
Wang, C. [1 ]
Cui, Y. -T. [1 ]
Sun, J. Z. [2 ]
Katine, J. A. [3 ]
Buhrman, R. A. [1 ]
Ralph, D. C. [1 ]
机构
[1] Cornell Univ, Ithaca, NY 14853 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95135 USA
关键词
ferromagnetic resonance; magnesium compounds; magnetic moments; magnetic tunnelling; VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I
10.1103/PhysRevB.79.224416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector tau in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a function of bias, V. We explain the conflicting conclusions of two previous experiments by accounting for additional terms that contribute to the ST-FMR signal at large vertical bar V vertical bar. Including the additional terms gives us improved precision in the determination of tau(V), allowing us to distinguish among competing predictions. We determine that the in-plane component of d tau/dV has a weak but nonzero dependence on bias, varying by 30%-35% over the bias range where the measurements are accurate, and that the perpendicular component can be large enough to be technologically significant. We also make comparisons to other experimental techniques that have been used to try to measure tau(V).
引用
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页数:10
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