Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices

被引：0

作者：

Mamutin, V. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

OPTICAL-PROPERTIES; QUANTUM-WELLS; HETEROSTRUCTURES; WAVELENGTH;

D O I：

10.1134/S1063785009040294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of some parameters of nitrogen-containing heterostructures InAs/GaAsN/InGaAsN with strain-compensated superlattices (SCSL) on their emission characteristics has been studied. It is established that the net strain in the structure affects the photoluminescence (PL) linewidth, internal quantum efficiency, intensity, and wavelength. The maximum PL intensity and minimum full width at half maximum (FWHM) of the PL line were achieved with small strains (0-0.2%), whereas the maximum wavelengths (similar to 1.76 mu m) observed for large strain (about +1%). By adding multilayer InAs inserts in the active InGaAsN quantum well in combination with using strain-compensated GaAsN/InGaAsN superlattices, it is possible to control the room-temperature emission wavelength in the range of 1.45-1.76 mu m without significantly deteriorating the emissiion characteristics.

引用

页码：384 / 387

页数：4

共 50 条

[41] Elastic stress and emission nonhomogeneity in asymmetric InAs quantum dot in a well structures
Casas Espinola, Jose L.
Torchynska, Tetyana V.
Palacios Gomez, Jesus
Gomez Gasga, G.
Vivas Hernandez, Alejandro
Cisneros Tamayo, Ricardo
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 4, 2011, 8 (04): : 1391 - 1393
[42] Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ∼1.5 μm
Biswas, M.
Balgarkashi, A.
Singh, S.
Shinde, N.
Makkar, R. L.
Bhatnagar, A.
Chakrabarti, Subhananda
NANOPHOTONIC MATERIALS XIII, 2016, 9919
[43] Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
Lackner, D.
Pitts, O. J.
Steger, M.
Yang, A.
Thewalt, M. L. W.
Watkins, S. P.
APPLIED PHYSICS LETTERS, 2009, 95 (08)
[44] InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes
Tokranov, V
Yakimov, M
Katsnelson, A
Dovidenko, K
Todt, R
Oktyabrsky, S
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 135 - 140
[45] InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes
Tokranov, V
Yakimov, M
Katsnelson, A
Dovidenko, K
Todt, R
Oktyabrsky, S
SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 143 - 148
[46] Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures
Triplett, GE
Brown, AS
May, GS
JOURNAL OF CRYSTAL GROWTH, 2006, 286 (02) : 345 - 349
[47] Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid-Infrared Operation
Liu, Mengying
Shi, Chao
Li, Weijie
Nan, Pengfei
Fang, Xuan
Ge, Binghui
Xu, Zhi
Wang, Dengkui
Fang, Dan
Wang, Xiaohua
Li, Jiaming
Zeng, Liuqin
Du, Peng
Li, Jinhua
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (04):
[48] MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures
Xu, Zhicheng
Chen, Jianxin
Wang, Fangfang
Zhou, Yi
Bai, Zhizhong
Xu, Jiajia
Xu, Qingqing
Jin, Chuan
He, Li
JOURNAL OF CRYSTAL GROWTH, 2017, 477 : 277 - 282
[49] Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures
Alduraibi, M.
Mitchell, C.
Chakraborty, S.
Missous, M.
MICROELECTRONICS JOURNAL, 2009, 40 (03) : 476 - 478
[50] Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission
KONG Ling-min~1
2. National Lab. for Superlattice and Microstructures
SemiconductorPhotonicsandTechnology, 2005, (02) : 78 - 80

← 1 2 3 4 5 →