Resonant Raman scattering in MoS2-From bulk to monolayer

被引：111
|
作者：
Golasa, K. [1 ]
Grzeszczyk, M. [1 ]
Bozek, R. [1 ]
Leszczynski, P. [2 ]
Wysmolek, A. [1 ]
Potemski, M. [2 ]
Babinski, A. [1 ]
机构：
[1] Univ Warsaw, Fac Phys, PL-02093 Warsaw, Poland
[2] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France
来源：
SOLID STATE COMMUNICATIONS | 2014年 / 197卷
基金：
欧洲研究理事会;
关键词：
Semiconductors; Raman scattering; MOS2;
D O I：
10.1016/j.ssc.2014.08.009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Resonant Raman scattering in molybdenum disulfide (MoS2) is studied as a function of the structure thickness. Optical emission from bulk, three-, two-, and one- monolayer MoS2 is studied both at room and at liquid helium temperature. The quenching of peaks due to second-order processes was observed and attributed to the effect of the substrate on the lattice dynamics in MoS2. The experimental results are discussed within the frames of the recently proposed model of electron-phonon coupling involving transverse acoustic phonons from the vicinity of the high-symmetry M point of the MoS2 Brillouin zone. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：53 / 56
页数：4
相关论文
共 50 条
  • [1] From Bulk to Monolayer MoS2: Evolution of Raman Scattering
    Li, Hong
    Zhang, Qing
    Yap, Chin Chong Ray
    Tay, Beng Kang
    Edwin, Teo Hang Tong
    Olivier, Aurelien
    Baillargeat, Dominique
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (07) : 1385 - 1390
  • [2] RESONANT RAMAN-SCATTERING IN MOS2
    SMITH, JE
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 225 - 225
  • [3] Multiphonon resonant Raman scattering in MoS2
    Golasa, K.
    Grzeszczyk, M.
    Leszczynski, P.
    Faugeras, C.
    Nicolet, A. A. L.
    Wysmolek, A.
    Potemski, M.
    Babinski, A.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [4] New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization
    Jianqi Huang
    Zhiyong Liu
    Teng Yang
    Zhidong Zhang
    [J]. Journal of Materials Science & Technology, 2022, 102 (07) : 132 - 136
  • [5] New selection rule of resonant Raman scattering in MoS2 monolayer under circular polarization
    Huang, Jianqi
    Liu, Zhiyong
    Yang, Teng
    Zhang, Zhidong
    [J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 102 : 132 - 136
  • [6] The study of dispersive 'b'-mode in monolayer MoS2 in temperature dependent resonant Raman scattering experiments
    Kutrowska-Girzycka, Joanna
    Jadczak, Joanna
    Bryja, Leszek
    [J]. SOLID STATE COMMUNICATIONS, 2018, 275 : 25 - 28
  • [7] Strong exciton regulation of Raman scattering in monolayer MoS2
    Wang, Yuanxi
    Carvalho, Bruno R.
    Crespi, Vincent H.
    [J]. PHYSICAL REVIEW B, 2018, 98 (16)
  • [8] The Study of Dispersive 'b'-Mode in Monolayer MoS2 in Polarization-Resolved Resonant Raman Scattering Experiments
    Kutrowska-Girzycka, J.
    Kapuscinski, P.
    Jadczak, J.
    Bryja, L.
    [J]. ACTA PHYSICA POLONICA A, 2018, 134 (04) : 947 - 949
  • [9] Resonant Raman scattering in an InAs/GaAs monolayer structure
    Maultzsch, J
    Reich, S
    Goñi, AR
    Thomsen, C
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 697 - 698
  • [10] RESONANT RAMAN-SCATTERING FROM A DYE MONOLAYER DEPOSITED ON A POLYMER SURFACE
    RABOLT, JF
    SCHLOTTER, NE
    SWALEN, JD
    SANTO, R
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 328 - 328
12345