Resonant Raman scattering in an InAs/GaAs monolayer structure

被引：0
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作者：
Maultzsch, J [1 ]
Reich, S [1 ]
Goñi, AR [1 ]
Thomsen, C [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the excitation-energy dependence for Rai nan scattering on the GaAs optical phonon modes in an InAs/GaAs heterostructure. The GaAs LO phonon scattering exhibits a resonance with the InAs optical transitions, the Raman profiles depending on the polarization of the incoming light. We interpret our results as due to incoming resonance with E1-HH 1 and the E1-LH 1 transition of the monolayer. In addition, we demonstrate that the scattering intensity is influenced by an inhomogeneous exciton linewidth due to fluctuations in the well width.
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页码：697 / 698
页数：2
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