Research of SIR Filter Based on Integrated Passive Device Technology

This paper presents a third order coupled bandpass filter using integrated passive device technology and SIR architecture. The filter is based on the semiconductor wafer IPD process, using thin film technique and photolithography technology, possessing the advantages of high harmonic suppression. Compared with passive device process such as LTCC (low temperature co-fired ceramic), this filter has a smaller size. The designed bandpass filter exhibits low insertion loss less than 1.5 dB, the return loss around 20 dB, center frequency at 5.96GHz, bandpass width at 2.5 GHz. The passband voltage standing wave ratio (VSWR) is under 1.5. Above all, the filter only occupies the area of 1.4 mm x 0.8 mm.