Role of the -SiH3 functional group in silane adsorption and dissociation on Si(100)

被引:27
|
作者
Xu, JZ
Choyke, WJ
Yates, JT
机构
[1] UNIV PITTSBURGH,DEPT CHEM,CTR SURFACE SCI,PITTSBURGH,PA 15260
[2] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 1997年 / 101卷 / 35期
关键词
D O I
10.1021/jp970832s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption and reaction behavior of methylsilane (CH3SiH3) and disilane (Si2H6) On Si(100) single crystals has been studied using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). It was found that CH3SiH3 and Si2H6 molecules have similar adsorption behavior while ethane (C2H6) does not stick on Si(100) at 90 K. These results indicate that -SiH3 is the key functional group involved in silane adsorption. The adsorption coverage of CH3SiH3 at 90 K was found to be about twice as large as that at 300 K, indicating that methylsilane adsorbs dissociatively on Si(100) at 300 K with the breaking of the Si-C bond, producing enhanced dangling bond site blockage compared to the undissociated chemisorbed molecule. Based on the results, pentacoordinate silicon in -SiH3 groups is postulated to be involved in the nondissociative chemisorption and in the S(N)2 dissociative reaction of CH3SiH3 on dangling bond sites on Si(100).
引用
收藏
页码:6879 / 6882
页数:4
相关论文
共 50 条
  • [31] Surface diffusion of SiH3 radicals and growth mechanism of a-Si:H and μc-Si
    Dewarrat, R
    Robertson, J
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 15 - 20
  • [32] FORMATION OF HYDROGEN-ATOMS IN SILANE PYROLYSIS BEHIND SHOCK-WAVES - KINETICS AND THERMOCHEMISTRY OF SIH4, SIH3, AND SIH2 DECOMPOSITION
    MICK, HJ
    ROTH, P
    SMIRNOV, VN
    ZASLONKO, IS
    KINETICS AND CATALYSIS, 1994, 35 (04) : 439 - 451
  • [33] Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface
    Dewarrat, R
    Robertson, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 48 - 52
  • [34] Dissociative adsorption of silane on the Si(100)-(2 × 1) surface
    Dept. of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, United States
    不详
    J Chem Phys, 5 (2643-2651):
  • [35] THE ADSORPTION OF PH3 ON SI(100) AND ITS EFFECT ON THE COADSORPTION OF SIH4
    YU, ML
    MEYERSON, BS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 446 - 449
  • [36] TETRASILYLMETHANE, C(SIH3)4, THE SI/C-INVERSE OF TETRAMETHYLSILANE, SI(CH3)4
    HAGER, R
    STEIGELMANN, O
    MULLER, G
    SCHMIDBAUR, H
    ROBERTSON, HE
    RANKIN, DWH
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH, 1990, 29 (02): : 201 - 203
  • [37] Simulation of SiH4 adsorption on H/Si(100) surfaces
    Anan'yina, O
    Yanovs'ky, E
    THIN SOLID FILMS, 2006, 501 (1-2) : 354 - 357
  • [38] MEASUREMENT OF ABSOLUTE DENSITIES OF SI, SIH AND SIH3 IN ELECTRON-CYCLOTRON-RESONANCE SIH4/H-2 PLASMA
    YAMAMOTO, Y
    NOMURA, H
    TANAKA, T
    HIRAMATSU, M
    HORI, M
    GOTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4320 - 4324
  • [40] SYNTHESIS AND MOLECULAR-STRUCTURE OF CH3M(SIH3)3 (M=SI, GE)
    LOBREYER, T
    OELER, J
    SUNDERMEYER, W
    OBERHAMMER, H
    CHEMISCHE BERICHTE-RECUEIL, 1993, 126 (03): : 665 - 668