Coupling capacitance in through-silicon vias: non-homogeneous medium effect

被引：3
|
作者：
Ramadan, T. [1 ,3 ]
Yahya, E. [2 ,4 ]
Ismail, Y. [2 ]
Dessouky, M. [1 ,3 ]
机构：
[1] Mentor Graph Corp, Cairo, Egypt
[2] Zewail Univ Sci & Technol ZC, Amer Univ Cairo, Ctr Nanoelect & Devices, Cairo, Egypt
[3] Ain Shams Univ, Fac Engn, Cairo, Egypt
[4] Benha Univ, Fac Engn, Banha, Egypt
来源：
ELECTRONICS LETTERS | 2016年 / 52卷 / 02期
关键词：
D O I：
10.1049/el.2015.3141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To extract the coupling capacitance between any two neighbouring through-silicon vias (TSVs) in three-dimensional integrated circuits, most publications use the relation between the inductance matrix and the capacitance matrix (per unit length). However, this relation is based on a homogeneous surrounding medium assumption. It is shown that the previous assumption is inaccurate due to the fact that each TSV is actually surrounded by a non-homogeneous medium (silicon and silicon dioxide materials). The theory behind this claim is provided and validated using ANSYS Q3D. The percentage error in coupling capacitance between the Q3D extraction results and the homogeneous medium model results can reach 70%.
引用
收藏
页码：152 / 153
页数：2
相关论文
共 50 条
  • [31] The breaking of a non-homogeneous fiber embedded in an infinite non-homogeneous medium
    J. Vrbik
    B. M. Singh
    J. Rokne
    R. S. Dhaliwal
    Zeitschrift für angewandte Mathematik und Physik ZAMP, 2003, 54 : 212 - 223
  • [32] Electrical, Optical and Fluidic Through-Silicon Vias for Silicon Interposer Applications
    Parekh, Mahavir S.
    Thadesar, Paragkumar A.
    Bakir, Muhannad S.
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1992 - 1998
  • [33] Electrical, optical and fluidic through-silicon vias for silicon interposer applications
    Georgia Institute of Technology, 791 Atlantic Drive, Atlanta, GA 30332, United States
    Proc Electron Compon Technol Conf, 2011, (1992-1998):
  • [34] Parasitic Inductance of Non-Uniform Through-Silicon Vias (TSVs) for Microwave Applications
    Liu, Xiaoxian
    Zhu, Zhangming
    Yang, Yintang
    Ding, Ruixue
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (07) : 424 - 426
  • [35] Experimental Assessment and Analysis of the Influence of Radiation on Through-silicon Vias
    Zeng, Qinghua
    Chen, Jing
    Jin, Yufeng
    2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018), 2018, : 1164 - 1169
  • [36] Qubit-Compatible Substrates With Superconducting Through-Silicon Vias
    Grigoras K.
    Yurttagul N.
    Kaikkonen J.-P.
    Mannila E.T.
    Eskelinen P.
    Lozano D.P.
    Li H.-X.
    Rommel M.
    Shiri D.
    Tiencken N.
    Simbierowicz S.
    Ronzani A.
    Hatinen J.
    Datta D.
    Vesterinen V.
    Gronberg L.
    Biznarova J.
    Fadavi Roudsari A.
    Kosen S.
    Osman A.
    Prunnila M.
    Hassel J.
    Bylander J.
    Govenius J.
    IEEE Transactions on Quantum Engineering, 2022, 3
  • [37] Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias
    Liu, Yang
    Han, Yutong
    Zhang, Junhong
    He, Junpeng
    Hang, Tao
    Gao, Liming
    Wu, Yunwen
    Li, Ming
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (10) : P591 - P595
  • [38] A Model for the Free (Top) Surface Deformation of Through-Silicon Vias
    Udupa, Anirudh
    Subbarayan, Ganesh
    Koh, Cheng-kok
    2014 IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2014, : 616 - 620
  • [39] Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias
    Su, Fei
    Pan, Xiaoxu
    Huang, Pengfei
    Guan, Yong
    Chen, Jing
    Ma, Shenglin
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2016, 6 (08): : 1221 - 1225
  • [40] Alternative insulation liners for through-silicon vias: A comprehensive review
    Tian, Miao
    Gu, Xiaokun
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
12345