X-band RF MEMS phase shifters for phased array applications

被引：131
|
作者：
Malczewski, A [1 ]
Eshelman, S [1 ]
Pillans, B [1 ]
Ehmke, J [1 ]
Goldsmith, CL [1 ]
机构：
[1] Raytheon Syst Co, Dallas, TX 75266 USA
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 12期
关键词：
low loss; microelectromechanical systems (MEMS); phase shifters; switches;
D O I：
10.1109/75.819417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, development of a low-loss radio frequency (RF) microelectromechanical (MEMS) 4-bit X-band monolithic phase shifter is presented. These microstrip circuits are fabricated on 0.021-in-thick high-resistivity silicon and are based on a reflection topology using 3-dB Lange couplers. The average insertion loss of the circuit is 1.4 dB with the return loss >11 dB at 8 GHz. To the best of our knowledge, this is a lowest reported loss for X-band phase shifter and promises to greatly reduce the cost of designing and building phase arrays.
引用
收藏
页码：517 / 519
页数：3
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