Angle-Dependent Spectral Width of Resonant-Cavity Light-Emitting Diode

被引：1
|
作者：
Morikura, Susumu [1 ]
Okamura, Yasuyuki [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5718501, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 9-12期
关键词：
Emission angle; light-emitting diode (LED); reflectivity; resonant cavity; spectral width; NM;
D O I：
10.1109/LPT.2009.2016218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of spectral width of a resonant-cavity light-emitting diode are theoretically and experimentally presented for an angular emission. To clarify the influence of the reflectivity of the distributed Bragg reflector on the spectral width, the optical matrix method was used for both the transverse-magnetic and transverse-electric waves. The calculated results were in good agreement with the experimental ones that showed the spectral broadening at the greater angle.
引用
收藏
页码：660 / 662
页数：3
相关论文
共 50 条
  • [41] Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes
    Xu, Rong-Bin
    Xu, Huan
    Mei, Yang
    Shi, Xiao-Ling
    Ying, Lei-Ying
    Zheng, Zhi-Wei
    Long, Hao
    Qiu, Zhi-Ren
    Zhang, Bao-Ping
    Liu, Jian-Ping
    Kuo, Hao-Chung
    [J]. JOURNAL OF LUMINESCENCE, 2019, 216
  • [42] Investigations of the fundamental quantum noise properties of resonant-cavity light-emitting diodes (RCLEDS)
    Kappe, Philipp
    Kaiser, Joachim
    Elsässer, Wolfgang
    Wirth, Ralph
    Streubel, Klaus
    [J]. Annales des Telecommunications/Annals of Telecommunications, 2003, 58 (9-10): : 1424 - 1431
  • [43] Characteristics of oxide-confined AlGaAs/GaAs resonant-cavity light-emitting diodes
    Yang, HPD
    Wu, CZ
    Wang, ML
    Jiang, WC
    Yu, SJ
    Sung, CP
    [J]. OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 162 - 169
  • [44] 650 nm resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors
    Lei, Po-Hsun
    Yang, Chyi-Dar
    [J]. SOLID-STATE ELECTRONICS, 2008, 52 (02) : 227 - 232
  • [45] 1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate
    Jin, X
    Yu, SQ
    Cao, Y
    Ding, D
    Wang, JB
    Samal, N
    Sadofyev, Y
    Johnson, SR
    Zhang, YH
    [J]. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 69 - 70
  • [46] Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy
    Naranjo, FB
    Fernández, S
    Sánchez-García, MA
    Calle, F
    Calleja, E
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (12) : 2198 - 2200
  • [47] Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode
    Delbeke, D
    Bienstman, P
    Bockstaele, R
    Baets, R
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 2002, 19 (05): : 871 - 880
  • [48] ENHANCED SPECTRAL POWER-DENSITY AND REDUCED LINEWIDTH AT 1.3-MU-M IN AN INGAASP QUANTUM-WELL RESONANT-CAVITY LIGHT-EMITTING DIODE
    HUNT, NEJ
    SCHUBERT, EF
    LOGAN, RA
    ZYDZIK, GJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (19) : 2287 - 2289
  • [49] Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors
    Torres, Estrella
    Ciers, Joachim
    Bergmann, Michael A.
    Hoepfner, Jakob
    Graupeter, Sarina
    Grigoletto, Massimo
    Guttmann, Martin
    Kolbe, Tim
    Wernicke, Tim
    Kneissl, Michael
    Haglund, Asa
    [J]. ACS PHOTONICS, 2024, 11 (08): : 2923 - 2929
  • [50] ALGAINP VISIBLE RESONANT-CAVITY LIGHT-EMITTING-DIODES
    LOTT, JA
    SCHNEIDER, RP
    ZOLPER, JC
    MALLOY, KJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 631 - 633
12345