Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements

被引:142
|
作者
Mardare, D [1 ]
Hones, P
机构
[1] Alexandru Ioan Cuza Univ, Fac Phys, R-6600 Iasi, Romania
[2] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland
关键词
titanium oxide thin films; sputtering; spectroscopic ellipsometry; AFM; optical constants;
D O I
10.1016/S0921-5107(99)00335-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pure and doped TiO2 thin films, deposited by reactive r.f. sputtering onto glass substrates, have been investigated by spectroscopic ellipsometry in the wavelength range between 360 and 830 nm. Doping with Ce and Nb induces structural changes in TiO2 and modifies its optical constants. While undoped TiO2 films crystallize in a mixed rutile/anatase phase at a substrate temperature of 250 degrees C, the doped films exhibit the anatase phase only. Using a polynomial and a single oscillator model dispersion function the spectral dependency of the refractive index and the extinction coefficient, as well as the optical band-gap have been determined. It turned out that even a moderate surface roughness in the range of 10 nm significantly influences the absolute value of the refractive index. Therefore. the surface roughness has been measured by atomic force microscopy and has been taken into account in the ellipsometric model. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
下载
收藏
页码:42 / 47
页数:6
相关论文
共 50 条
  • [41] Porosity depth profiling of thin porous silicon layers by use of variable-angle spectroscopic ellipsometry: a porosity graded-layer
    Pettersson, LAA
    Hultman, L
    Arwin, H
    APPLIED OPTICS, 1998, 37 (19): : 4130 - 4136
  • [42] Microstructural analysis and modelling of thin porous silicon layers with variable angle spectroscopic ellipsometry
    Pettersson, LAA
    Zangooie, S
    Bjorklund, R
    Arwin, H
    MICROPOROUS AND MACROPOROUS MATERIALS, 1996, 431 : 259 - 264
  • [43] Optical characterization of polycrystalline ZnSe1-xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques
    Shaaban, E. R.
    El-Hagary, M.
    Emam-Ismail, M.
    Abd Elnaeim, A. M.
    Moustafa, S. H.
    Adel, A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 : 735 - 741
  • [44] Optical Properties of TiO2 Thin Films
    Evtushenko, Yu. M.
    Romashkin, S. V.
    Trofimov, N. S.
    Chekhlova, T. K.
    4TH INTERNATIONAL CONFERENCE OF PHOTONICS AND INFORMATION OPTICS, PHIO 2015, 2015, 73 : 100 - 107
  • [45] Structure and optical properties of TiO2 thin films prepared by glancing angle deposition
    Zhao, B.
    Zhou, J.
    Chen, Y.
    Peng, Y.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (12): : 1990 - 1993
  • [46] Optical properties of TiO2-x thin films studied by spectroscopic ellipsometry:: substrate temperature effect
    Camacho-López, MA
    Sánchez-Pérez, C
    Esparza, A
    Ghibaudo, E
    Rodil, S
    Muhl, S
    Escobar-Alarcón, L
    RIAO/OPTILAS 2004: 5TH IBEROAMERICAN MEETING ON OPTICS AND 8TH LATIN AMERICAN MEETING ON OPTICS, LASERS, AND THEIR APPLICATIONS, PTS 1-3: ICO REGIONAL MEETING, 2004, 5622 : 545 - 550
  • [47] Electrical and optical properties of TiO2 and TiO2:Fe thin films
    Solovan, M. N.
    Maryanchuk, P. D.
    Brus, V. V.
    Parfenyuk, O. A.
    INORGANIC MATERIALS, 2012, 48 (10) : 1026 - 1032
  • [48] Electrical and optical properties of TiO2 and TiO2:Fe thin films
    M. N. Solovan
    P. D. Maryanchuk
    V. V. Brus
    O. A. Parfenyuk
    Inorganic Materials, 2012, 48 : 1026 - 1032
  • [49] Spectroscopic ellipsometry study on TiO2 thin films modified by N2-H2 plasma surface treatment
    Tanemura, S
    Miao, L
    Watanabe, H
    Mori, Y
    APPLIED SURFACE SCIENCE, 2005, 244 (1-4) : 546 - 549
  • [50] Optical characterization of inhomogeneous thin films of ZrO2 by spectroscopic ellipsometry and spectroscopic reflectometry
    Franta, D
    Ohlídal, I
    SURFACE AND INTERFACE ANALYSIS, 2000, 30 (01) : 574 - 579