Electromigration early failure distribution in submicron interconnects

被引:0
|
作者
Gall, M [1 ]
Ho, PS [1 ]
Capasso, C [1 ]
Jawarani, D [1 ]
Hernandez, R [1 ]
Kawasaki, H [1 ]
机构
[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA
来源
STRESS INDUCED PHENOMENA IN METALLIZATION | 1999年 / 491卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The early failure issue in electromigration has been an unresolved subject of study over the last several decades. A satisfying experimental approach for the detection and analysis of early fails has not been established yet. In this study, a new technique utilizing large interconnect arrays in conjunction with the well known Wheatstone Bridge is presented. Three types of structures with varying number of interconnects were used, starring from a small unit of five lines in parallel. A serial arrangement of this unit enabled testing of interconnect arrays encompassing 480 possible failure links. In addition, a Wheatstone Bridge-type wiring using four large arrays in each device enabled simultaneous testing of 1,920 interconnects. In conjunction with a statistical deconvolution to the single interconnect level, the results indicate that the electromigration failure mechanism studied here follows perfect lognormal behavior down to the four sigma level.
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收藏
页码:3 / 14
页数:12
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