Low-voltage electroluminescence of europium in zinc oxide thin films

被引：32
|
作者：
Lima, S. A. M.
Davolos, M. R.
Quirino, W. G.
Legnani, C.
Cremona, M.
机构：
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, LOEM, BR-22453900 Rio De Janeiro, Brazil
[2] LML, Inst Quym Araraquara, BR-14800970 Araraquara, SP, Brazil
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1063/1.2431566
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Europium(III)-containing zinc oxide thin films (1, 5, 8, and 10 at. %) were prepared from Pechini's solution and used as active layers in thin-film electroluminescent devices. By applying a low bias steady state voltage (10-50 V) it was possible to observe electroluminescence of the device. By increasing the rate Eu3+/Zn2+ the relative intensity of emission from the dopand Eu3+ ions increases, while the relative intensity of emission from the zinc oxide (ZnO) matrix decreases. This leads to ZnO:Eu3+ (10 at. %) thin-film electroluminescent devices with low-voltage operation and high pure color.
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页数：3
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