Controlling optical polarization conversion with Ge2Sb2Te5-based phase-change dielectric metamaterials

被引:74
|
作者
Zhu, Wei [1 ,2 ]
Yang, Ruisheng [1 ,2 ]
Fan, Yuancheng [1 ,2 ]
Fu, Quanhong [1 ,2 ]
Wu, Hongjing [1 ,2 ]
Zhang, Peng [3 ,4 ]
Shen, Nian-Hai [3 ,4 ]
Zhang, Fuli [1 ,2 ]
机构
[1] Northwestern Polytech Univ, Key Lab Space Appl Phys & Chem, Minist Educ, Xian 710129, Shaanxi, Peoples R China
[2] Northwestern Polytech Univ, Dept Appl Phys, Sch Sci, Xian 710129, Shaanxi, Peoples R China
[3] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[4] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
基金
美国国家科学基金会;
关键词
COHERENT PERFECT ABSORPTION; SPLIT-RING RESONATORS; NEGATIVE-INDEX; GRAPHENE PLASMONICS; TERAHERTZ; CLOAK; SURFACE; ENHANCEMENT; RESONANCE;
D O I
10.1039/c8nr02587h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recent progress in the metamaterial-based polarization manipulation of light highlights the promise of novel polarization-dependent optical components and systems. To overcome the limited frequency bandwidth of metamaterials resulting from their resonant nature, it is desirable to incorporate tunability into metamaterial-based polarization manipulations. Here, we propose a dielectric metamaterial for controlling linear polarization conversion using the phase-change characteristic of Ge2Sb2Te5 (GST), whose refractive index changes significantly when transforming from the amorphous phase to the crystalline phase under external stimuli. The polarization conversion phenomena are systematically studied using different arrangements of GST in this metamaterial. The performance of linear polarization conversion and the tunability are also analyzed and compared in three different designs. It is found that phase-change materials such as GST can be employed in dielectric materials for tunable and switchable linear polarization conversion in the telecom band. The conversion efficiency can be significantly modulated during the phase transition. Our results provide useful insights for incorporating phase-change materials with metamaterials for tunable polarization manipulation.
引用
收藏
页码:12054 / 12061
页数:8
相关论文
共 50 条
  • [31] Evidence for segregation of Te in Ge2Sb2Te5 films:: Effect on the "phase-change" stress
    Krusin-Elbaum, L.
    Cabral, C., Jr.
    Chen, K. N.
    Copel, M.
    Abraham, D. W.
    Reuter, K. B.
    Rossnagel, S. M.
    Bruley, J.
    Deline, V. R.
    APPLIED PHYSICS LETTERS, 2007, 90 (14)
  • [32] Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage
    Wang, K
    Steimer, C
    Wamwangi, D
    Ziegler, S
    Wuttig, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08): : 1611 - 1616
  • [33] Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage
    K. Wang
    C. Steimer
    D. Wamwangi
    S. Ziegler
    M. Wuttig
    Applied Physics A, 2005, 80 : 1611 - 1616
  • [34] Effect of dielectric material films on crystallization characteristics of Ge2Sb2Te5 phase-change memory film
    Nishiuchi, Kenichi
    Yamada, Noboru
    Kawahara, Katsumi
    Kojima, Rie
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (11): : 7421 - 7423
  • [35] Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application
    Zhou, Xilin
    Xia, Mengjiao
    Rao, Feng
    Wu, Liangcai
    Li, Xianbin
    Song, Zhitang
    Feng, Songlin
    Sun, Hongbo
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (16) : 14207 - 14214
  • [36] Dynamic theory of crystallization in Ge2Sb2.3Te5 phase-change optical recording media
    Wright, EM
    Khulbe, PK
    Mansuripur, M
    APPLIED OPTICS, 2000, 39 (35) : 6695 - 6701
  • [37] SPECTROSCOPIC ELLIPSOMETRY STUDIES ON OPTICAL-CONSTANTS OF GE2SB2TE5 USED FOR PHASE-CHANGE OPTICAL DISKS
    IDE, T
    SUZUKI, M
    OKADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (4B): : L529 - L532
  • [38] Simulation of waveguide integrated Ge2Sb2Te5-based tunable photodetector
    Johari, Anoopshi
    Naithani, Sanjeev
    Kaur, Baljinder
    Bhatnagar, Abhinav
    Kaushik, Brajesh Kumar
    OPTICAL ENGINEERING, 2023, 62 (08)
  • [39] Ge2Sb2Te5-Based Tunable Perfect Absorber Cavity with Phase Singularity at Visible Frequencies
    Sreekanth, Kandammathe Valiyaveedu
    Han, Song
    Singh, Ranjan
    ADVANCED MATERIALS, 2018, 30 (21)
  • [40] Critical quenching speed determining phase of Ge2Sb2Te5 in phase-change memory
    Suh, D. -S.
    Kim, K. H. P.
    Noh, J. -S.
    Shin, W. -C.
    Kang, Y. -S.
    Kim, C.
    Khang, Y.
    Yoo, I. K.
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 527 - +