Comparison of contemporary CMOS ring oscillators

被引:14
|
作者
Badillo, DA [1 ]
Kiaei, S [1 ]
机构
[1] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA
关键词
CMOS; ring oscillators; phase noise;
D O I
10.1109/RFIC.2004.1320596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents measured data and analysis accurately comparing three, four-stage ring oscillators. The delay cell topologies considered here include the, linear source coupled, and two saturating types. Each oscillator is fabricated concurrently in a 1.8V,.18mum CMOS process and is characterized for phase noise, power consumption and tuning range.
引用
收藏
页码:281 / 284
页数:4
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