Comparison of contemporary CMOS ring oscillators

被引：14

作者：

Badillo, DA ^{[1
]}

Kiaei, S ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

CMOS; ring oscillators; phase noise;

D O I：

10.1109/RFIC.2004.1320596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents measured data and analysis accurately comparing three, four-stage ring oscillators. The delay cell topologies considered here include the, linear source coupled, and two saturating types. Each oscillator is fabricated concurrently in a 1.8V,.18mum CMOS process and is characterized for phase noise, power consumption and tuning range.

引用

页码：281 / 284

页数：4

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