Analysis of V-shaped Pits originated from Threading Dislocation in III-nitrides compound for Light Emitting Diodes

被引：0

作者：

Ok, Yulho ^{[1
,2
]}

Kim, Sunwoon ^{[1
]}

Kim, In ^{[1
]}

Cho, Hyungkoun ^{[2
]}

机构：

[1] Samsung Elect Co Ltd, Div LED, San 24, Yongin 446711, Gyeonggi Do, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi, South Korea

来源：

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15 | 2014年 / 61卷 / 04期

关键词：

D O I：

10.1149/06104.0313ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, problems of v-shaped pits originated from threading dislocation that can occur during the fabrication of light emitting diode and ways to solve these problems were introduced. First of all the electrical properties were measured by observable point of a v-shaped pit, then a form of v-shaped pit was separated according to the electrical properties. We found a correlation between the electrical properties and the form of v-shaped pit. Furthermore we knew that the particular form of v-shaped pit led to a leakage current. Consequentially, the improvement of these leakage current from v-shaped pits was proposed.

引用

页码：313 / 317

页数：5

共 39 条

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