Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction

被引：33
|
作者：
Liu, Y. K. [1 ]
Yin, Y. W. [1 ]
Dong, S. N. [1 ]
Yang, S. W. [1 ]
Jiang, T. [1 ]
Li, X. G. [1 ]
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 04期
基金：
中国国家自然科学基金;
关键词：
FERROELECTRIC CONTROL; SPIN POLARIZATION; ELECTRORESISTANCE; BARRIERS; INTERFACE; FILMS;
D O I：
10.1063/1.4863741
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ferroelectric and tunnel electro- and magnetoresistance properties in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junctions sandwiched with the antiferromagneticferroelectric BiFeO3 as a tunnel barrier were reported. Besides the four non-volatile resistance states and the interfacial magnetoelectric coupling effect with the tunnel magnetoresistance manipulated by ferroelectric polarizations, one of the most important results is that the exchange bias effect on the tunnel magnetoresistance is observed in this junction due to the magnetic interaction between antiferromagnetic BiFeO3 and ferromagnetic La0.6Sr0.4MnO3 layers. These finds may be helpful for designing exchange bias based multiferroic tunnel junction in next generation random access memory devices. (C) 2014 AIP Publishing LLC.
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页数：4
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