Evaluation of 193nm immersion resist without topcoat

被引：2
|
作者：
Wei, Yayi [1 ]
Stepanenko, N. [2 ]
Laessig, A. [2 ]
Voelkel, L. [2 ]
Sebald, M. [3 ]
机构：
[1] Infineon Technol North Amer Corp, Albany, NY 12207 USA
[2] Infineon Technol SC300 GmbH & Co OHG, Dresden, Germany
[3] Infineon Technol AG, Erlangen, Germany
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2 | 2006年 / 6153卷
关键词：
193nm immersion lithography; resists; process window; pre-rinse; post-rinse;
D O I：
10.1117/12.655664
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
193nm immersion resist without topcoat is production preferred solution. The challenge of 193nm immersion resist is both low leaching level and high performance. This paper summarizes the screening results of selected 193nm immersion resists which are designed for use without top coatings. Our evaluation is divided into several phases. Leaching levels of resist samples were first tested. The leaching data were analyzed and compared to our specifications. Both binary image mask and alternating phase-shift mask exposures were done to evaluate the process window, line-edge roughness, and resist pattern profile. Resist films were rinsed by DI water prior to or after exposure, and contrast curves were measured to investigate the resist sensitivity change. The results are compared with resist systems which use developer-soluble topcoats.
引用
收藏
页码：U159 / U169
页数：11
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