Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility

被引：6
|
作者：
Kumar, Narender [1 ]
Rodrigues, G. [1 ]
Mathur, Y. [1 ]
Ojha, S. [1 ]
Ahuja, R. [1 ]
Kanjilal, D. [1 ]
机构：
[1] IUAC, New Delhi 110067, India
来源：
VACUUM | 2016年 / 124卷
关键词：
Microwave ion source; Ion implantation; MAGNETIC-FIELDS; IMPLANTATION; SILICON; PROGRAM; LAYERS;
D O I：
10.1016/j.vacuum.2015.11.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (ILIAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments using intense ion beams having energy in range of a few keV to a few tens of key. The plasma chamber was designed keeping two additional ports for plasma diagnostics. In order to deliver intense ion beams on the target with low electric field, a four-electrode extraction system has been developed. This facility has been used for 10 keV N+ & O+ ion implantation in silicon at varying doses. The implanted samples have been characterized by using Rutherford Back Scattering (RBS), RBS Channeling (RBS-C) and Nuclear Resonance Analysis (NRA). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：55 / 59
页数：5
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